Vishay SIA Type N-Channel MOSFET, 31 A, 40 V Enhancement, 7-Pin SC-70 SIA4446DJ-T1-GE3

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Subtotal (1 pack of 10 units)*

TWD218.00

(exc. GST)

TWD228.90

(inc. GST)

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Per unit
Per Pack*
10 - 40TWD21.80TWD218.00
50 - 90TWD16.20TWD162.00
100 - 240TWD14.50TWD145.00
250 - 990TWD14.30TWD143.00
1000 +TWD14.10TWD141.00

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Packaging Options:
RS Stock No.:
279-9902
Mfr. Part No.:
SIA4446DJ-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

31A

Maximum Drain Source Voltage Vds

40V

Series

SIA

Package Type

SC-70

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

0.011Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±16 V

Maximum Power Dissipation Pd

19.2W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

19nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

2.05mm

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

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