Vishay Dual TrenchFET 2 N-Channel MOSFET, 4.5 A, 20 V Enhancement, 8-Pin SC-70 SIA938DJT-T1-GE3

RS Stock No.:: 228-2835
Mfr. Part No.:: SIA938DJT-T1-GE3
Manufacturer:: Vishay

Vishay Dual TrenchFET 2 N-Channel MOSFET, 4.5 A, 20 V Enhancement, 8-Pin SC-70 SIA938DJT-T1-GE3

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Subtotal (1 pack of 25 units)*

TWD640.00

(exc. GST)

TWD672.00

(inc. GST)

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Units	Per unit	Per Pack*
25 - 25	TWD25.60	TWD640.00
50 - 75	TWD25.00	TWD625.00
100 - 225	TWD24.30	TWD607.50
250 - 975	TWD23.80	TWD595.00
1000 +	TWD23.20	TWD580.00

*price indicative

RS Stock No.:: 228-2835
Mfr. Part No.:: SIA938DJT-T1-GE3
Manufacturer:: Vishay

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	4.5A
	Maximum Drain Source Voltage Vds	20V
	Package Type	SC-70
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	21.5mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	7.8W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	3.5nC
	Maximum Gate Source Voltage Vgs	12V
	Maximum Operating Temperature	150°C
	Transistor Configuration	Dual
	Standards/Approvals	No
	Number of Elements per Chip	2
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 4.5A
	Maximum Drain Source Voltage Vds 20V
	Package Type SC-70
	Series TrenchFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 21.5mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 7.8W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 3.5nC
	Maximum Gate Source Voltage Vgs 12V
	Maximum Operating Temperature 150°C
	Transistor Configuration Dual
	Standards/Approvals No
	Number of Elements per Chip 2
	Automotive Standard No

Datasheet - SIA938DJT-T1-GE3

Vishay TrenchFET Series MOSFET, 20V Maximum Drain Source Voltage, 4.5A Maximum Continuous Drain Current - SIA938DJT-T1-GE3

This MOSFET is a compact dual N-channel enhancement-mode transistor designed for surface-mount power management. It offers a low-voltage switching solution suitable for dense electronic assemblies and is intended for applications requiring dual-channel control in an 8-pin SC-70 package. The device handles moderate continuous currents and dissipates limited power while operating across a wide temperature span.

Features and Benefits:

• Low on-resistance of 21.5 mΩ reduces conduction losses
• Maximum drain voltage of 20V supports low-voltage systems
• Continuous drain current rating of 4.5A enables moderate loads
• Gate charge of 3.5 nC allows faster switching and lower drive energy
• Power dissipation capability of 7.8W aids thermal budgeting
• Operating range -55 to 150 °C permits high-temperature deployment

Applications

• Suitable for battery-powered DC distribution stages
• Ideal for synchronous rectification in power converters
• Used for dual-channel load switching on compact boards
• Can be used for motor-drive low-voltage stages
• Suited to thermally challenged environments requiring high-temperature parts

What mounting method does it support on a PCB?

It is supplied for surface-mount assembly in an 8-pin SC-70 package, facilitating automated soldering and compact layout.

How does the device handle gate-drive limits?

The gate-source voltage must not exceed 12V to prevent gate-dielectric stress during operation.

Is the transistor suitable for complementary configurations?

It is a dual N-channel arrangement with two elements per die, allowing paired switch topologies where two N-type devices are required.

What thermal extremes can it tolerate in use?

The device is rated to operate down to -55 °C and up to 150 °C, permitting use across a broad thermal envelope.