Vishay ThunderFET N-Channel MOSFET, 11.3 A, 100 V Enhancement, 6-Pin SC-70 SIA416DJ-T1-GE3
- RS Stock No.:
- 818-1441
- Mfr. Part No.:
- SIA416DJ-T1-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 20 units)*
TWD494.00
(exc. GST)
TWD518.80
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from August 09, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 740 | TWD24.70 | TWD494.00 |
| 760 - 1480 | TWD24.10 | TWD482.00 |
| 1500 + | TWD23.70 | TWD474.00 |
*price indicative
- RS Stock No.:
- 818-1441
- Mfr. Part No.:
- SIA416DJ-T1-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 11.3A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | ThunderFET | |
| Package Type | SC-70 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 130mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Typical Gate Charge Qg @ Vgs | 6.5nC | |
| Forward Voltage Vf | 850mV | |
| Maximum Power Dissipation Pd | 19W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 750μm | |
| Standards/Approvals | No | |
| Width | 2.15mm | |
| Length | 2.15mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 11.3A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series ThunderFET | ||
Package Type SC-70 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 130mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Typical Gate Charge Qg @ Vgs 6.5nC | ||
Forward Voltage Vf 850mV | ||
Maximum Power Dissipation Pd 19W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 750μm | ||
Standards/Approvals No | ||
Width 2.15mm | ||
Length 2.15mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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