Infineon IPD Type N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-252
- RS Stock No.:
- 273-3004
- Mfr. Part No.:
- IPD079N06L3GATMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 5 units)*
TWD171.00
(exc. GST)
TWD179.55
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 2,330 unit(s) shipping from January 26, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | TWD34.20 | TWD171.00 |
| 50 - 95 | TWD26.40 | TWD132.00 |
| 100 - 245 | TWD24.20 | TWD121.00 |
| 250 - 995 | TWD24.00 | TWD120.00 |
| 1000 + | TWD23.60 | TWD118.00 |
*price indicative
- RS Stock No.:
- 273-3004
- Mfr. Part No.:
- IPD079N06L3GATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Series | IPD | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.9mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 50nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.731 mm | |
| Standards/Approvals | RoHS | |
| Length | 10.48mm | |
| Height | 6.223mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Series IPD | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.9mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 50nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 175°C | ||
Width 6.731 mm | ||
Standards/Approvals RoHS | ||
Length 10.48mm | ||
Height 6.223mm | ||
Automotive Standard No | ||
The Infineon power MOSFET is a perfect choice for synchronous rectification in switched mode power supplies such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications
Highest system efficiency
Less paralleling required
Increased power density
Related links
- Infineon IPD Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 IPD079N06L3GATMA1
- Infineon IPD Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-252
- Infineon IPD Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-252 IPD50N08S413ATMA1
- Infineon IPD Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- Infineon IPD Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Infineon IPD Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Infineon IPD Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Infineon IPD Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 IPD048N06L3GATMA1