Infineon IPD Type N-Channel MOSFET, 50 A, 80 V Enhancement, 3-Pin TO-252

The image is for reference only, please refer to product details and specifications

Bulk discount available

Subtotal (1 reel of 2500 units)*

TWD42,500.00

(exc. GST)

TWD44,625.00

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • 7,500 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
Per Reel*
2500 - 2500TWD17.00TWD42,500.00
5000 +TWD16.40TWD41,000.00

*price indicative

RS Stock No.:
229-1831
Mfr. Part No.:
IPD50N08S413ATMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

80V

Series

IPD

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

13.2mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

72W

Typical Gate Charge Qg @ Vgs

19nC

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

2.3mm

Length

6.5mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon n channel MOSFET has 175°C operating temperature and 100 percent avalanche tested.

It is RoHS compliant and AEC Q101 qualified

Related links