Infineon IPD Type N-Channel MOSFET, 90 A, 60 V Enhancement, 3-Pin TO-252

The image is for reference only, please refer to product details and specifications

Bulk discount available

Subtotal (1 pack of 5 units)*

TWD194.00

(exc. GST)

TWD203.70

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • 2,045 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
Per Pack*
5 - 45TWD38.80TWD194.00
50 - 95TWD29.80TWD149.00
100 - 245TWD27.60TWD138.00
250 - 995TWD27.20TWD136.00
1000 +TWD26.60TWD133.00

*price indicative

RS Stock No.:
273-3002
Mfr. Part No.:
IPD048N06L3GATMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

90A

Maximum Drain Source Voltage Vds

60V

Series

IPD

Package Type

TO-252

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

4.8mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

50nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Length

10.48mm

Height

6.223mm

Automotive Standard

No

The Infineon power MOSFET is a perfect choice for synchronous rectification in switched mode power supplies such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications

Highest system efficiency

Less paralleling required

Increased power density

Related links