Infineon IPD N-Channel MOSFET, 90 A, 60 V Enhancement, 3-Pin TO-252 IPD048N06L3GATMA1

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Subtotal (1 pack of 5 units)*

TWD421.00

(exc. GST)

TWD442.05

(inc. GST)

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Units
Per unit
Per Pack*
5 - 45TWD84.20TWD421.00
50 - 95TWD64.60TWD323.00
100 - 245TWD60.00TWD300.00
250 - 995TWD59.00TWD295.00
1000 +TWD57.60TWD288.00

*price indicative

RS Stock No.:
273-3002
Mfr. Part No.:
IPD048N06L3GATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

90A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-252

Series

IPD

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

4.8mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

50nC

Maximum Operating Temperature

175°C

Length

10.48mm

Height

6.223mm

Standards/Approvals

RoHS

Width

6.731mm

Automotive Standard

No

The Infineon power MOSFET is a perfect choice for synchronous rectification in switched mode power supplies such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications

Highest system efficiency

Less paralleling required

Increased power density

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