Vishay SIHH Type N-Channel MOSFET, 13 A, 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH250N60EF-T1GE3

RS Stock No.:: 268-8302
Mfr. Part No.:: SIHH250N60EF-T1GE3
Manufacturer:: Vishay

Vishay SIHH Type N-Channel MOSFET, 13 A, 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH250N60EF-T1GE3

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Subtotal (1 reel of 3000 units)*

TWD276,600.00

(exc. GST)

TWD290,430.00

(inc. GST)

FREE delivery for orders over NT$1,300.00

In Stock

3,000 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
3000 +	TWD92.20	TWD276,600.00

*price indicative

RS Stock No.:: 268-8302
Mfr. Part No.:: SIHH250N60EF-T1GE3
Manufacturer:: Vishay

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	13A
	Maximum Drain Source Voltage Vds	650V
	Package Type	PowerPAK 8 x 8
	Series	SIHH
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	0.25Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	23nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	89W
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Length	8mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Select all
	Brand Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 13A
	Maximum Drain Source Voltage Vds 650V
	Package Type PowerPAK 8 x 8
	Series SIHH
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 0.25Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 23nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 89W
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Length 8mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHH250N60EF-T1GE3

COO (Country of Origin):: TW

Vishay SIHH Series MOSFET, 650V Drain Source Voltage, 13A Continuous Drain Current - SIHH250N60EF-T1GE3

This MOSFET is a high-voltage N-channel transistor designed for switching and power conversion in industrial electrical systems. It is intended for surface-mounted assemblies where robust voltage handling and thermal endurance are required, and it operates across a wide temperature range to suit demanding environments.

Features and Benefits:

• 650V drain capability enables high-voltage switching applications • 13A continuous drain current supports substantial load currents • 0.25Ω Rds(on) reduces conduction losses during operation • 23nC typical gate charge allows controlled switching dynamics • 30V maximum gate drive tolerance accommodates standard gate drivers • 89W power dissipation permits sustained thermal loading

Applications

• Suitable for high-voltage power switching in industrial drives • Ideal for switch-mode power supplies requiring high Vds • Used for motor inverter stages handling moderate currents • Can be used for power factor correction modules in plant equipment

What mounting format is required for circuit assembly?

It uses a PowerPAK 8x8 surface package with four pins intended for low-inductance PCB mounting.

How does the device behave under extreme temperatures?

It is specified to operate from -55°C up to 150°C, allowing use in installations with wide thermal variation.

What is the maximum voltage between drain and source?

The maximum drain-source voltage rating is 650V, defining the upper limit for steady-state blocking voltage.

What gate drive limitations should be observed?

The gate-source voltage must not exceed 30V to avoid damaging the gate oxide.

Are there regulatory material restrictions noted?

The component is listed as RoHS-compliant, indicating restriction of certain hazardous substances.