ROHM RH6R025BH Type N-Channel MOSFET, 25 A, 150 V Enhancement, 8-Pin HSMT RH6R025BHTB1
- RS Stock No.:
- 266-3859
- Mfr. Part No.:
- RH6R025BHTB1
- Manufacturer:
- ROHM
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 5 units)*
TWD290.00
(exc. GST)
TWD304.50
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 2,930 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | TWD58.00 | TWD290.00 |
| 50 - 95 | TWD52.00 | TWD260.00 |
| 100 - 245 | TWD41.80 | TWD209.00 |
| 250 - 995 | TWD41.20 | TWD206.00 |
| 1000 + | TWD29.40 | TWD147.00 |
*price indicative
- RS Stock No.:
- 266-3859
- Mfr. Part No.:
- RH6R025BHTB1
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | HSMT | |
| Series | RH6R025BH | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 59W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 16.7nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type HSMT | ||
Series RH6R025BH | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 59W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 16.7nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ROHM power MOSFET with low-on resistance and high power small mould package, suitable for switching.
Pb free plating
RoHS compliant
Halogen free
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