ROHM RH6 1 N-Channel MOSFET, 65 A, 60 V Enhancement, 8-Pin HSMT-8 RH6L040BGTB1
- RS Stock No.:
- 264-934
- Mfr. Part No.:
- RH6L040BGTB1
- Manufacturer:
- ROHM
Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 10 units)*
TWD316.00
(exc. GST)
TWD331.80
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 2,860 unit(s) shipping from October 19, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 90 | TWD31.60 | TWD316.00 |
| 100 - 240 | TWD30.10 | TWD301.00 |
| 250 - 490 | TWD27.80 | TWD278.00 |
| 500 - 990 | TWD25.60 | TWD256.00 |
| 1000 + | TWD24.70 | TWD247.00 |
*price indicative
- RS Stock No.:
- 264-934
- Mfr. Part No.:
- RH6L040BGTB1
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 65A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | HSMT-8 | |
| Series | RH6 | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 7.1mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 18.8nC | |
| Maximum Power Dissipation Pd | 59W | |
| Maximum Operating Temperature | 150°C | |
| Number of Elements per Chip | 1 | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 65A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type HSMT-8 | ||
Series RH6 | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 7.1mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 18.8nC | ||
Maximum Power Dissipation Pd 59W | ||
Maximum Operating Temperature 150°C | ||
Number of Elements per Chip 1 | ||
The ROHM Nch 60V 65A HSMT8 is a power MOSFET with low on resistance, suitable for switching, motor drives, DC or DC converters.
Small Surface Mount Package
Pb-free plating
RoHS compliant
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