ROHM RQ3G100GN N-Channel MOSFET, 27 A, 40 V Enhancement, 8-Pin HSMT RQ3G100GNTB

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Subtotal (1 pack of 25 units)*

TWD305.00

(exc. GST)

TWD320.25

(inc. GST)

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Units
Per unit
Per Pack*
25 - 100TWD12.20TWD305.00
125 - 225TWD12.00TWD300.00
250 - 1225TWD11.70TWD292.50
1250 - 2475TWD11.40TWD285.00
2500 +TWD11.10TWD277.50

*price indicative

RS Stock No.:
133-3295
Mfr. Part No.:
RQ3G100GNTB
Manufacturer:
ROHM
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Brand

ROHM

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

27A

Maximum Drain Source Voltage Vds

40V

Series

RQ3G100GN

Package Type

HSMT

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

18.3mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

8.4nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

2W

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

-20V, +20V

Maximum Operating Temperature

150°C

Width

3.1mm

Standards/Approvals

RoHS

Height

850μm

Length

3.3mm

COO (Country of Origin):
JP

N-Channel MOSFET Transistors, ROHM


MOSFET Transistors, ROHM Semiconductor


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