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ROHM RQ3G100GN N-Channel MOSFET, 27 A, 40 V Enhancement, 8-Pin HSMT RQ3G100GNTB

Name: ROHM RQ3G100GN N-Channel MOSFET, 27 A, 40 V Enhancement, 8-Pin HSMT RQ3G100GNTB
Brand: ROHM
SKU: 133-3295
Availability: InStock

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Subtotal (1 pack of 25 units)*

TWD305.00

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TWD320.25

(inc. GST)

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Specifications

Product overview and Technical data sheets

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Product Details

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Select all	Attribute	Value
	Brand	ROHM
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	27A
	Maximum Drain Source Voltage Vds	40V
	Series	RQ3G100GN
	Package Type	HSMT
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	18.3mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	8.4nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	2W
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	-20V, +20V
	Maximum Operating Temperature	150°C
	Width	3.1mm
	Standards/Approvals	RoHS
	Height	850μm
	Length	3.3mm

	Select all
	Brand ROHM
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 27A
	Maximum Drain Source Voltage Vds 40V
	Series RQ3G100GN
	Package Type HSMT
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 18.3mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 8.4nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 2W
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs -20V, +20V
	Maximum Operating Temperature 150°C
	Width 3.1mm
	Standards/Approvals RoHS
	Height 850μm
	Length 3.3mm

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