ROHM RQ3G100GN Type N-Channel MOSFET, 27 A, 40 V Enhancement, 8-Pin HSMT RQ3G100GNTB
- RS Stock No.:
- 133-3295
- Mfr. Part No.:
- RQ3G100GNTB
- Manufacturer:
- ROHM
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 25 units)*
TWD305.00
(exc. GST)
TWD320.25
(inc. GST)
FREE delivery for orders over NT$1,300.00
Being discontinued
- Final 1,100 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 100 | TWD12.20 | TWD305.00 |
| 125 - 225 | TWD12.00 | TWD300.00 |
| 250 - 1225 | TWD11.70 | TWD292.50 |
| 1250 - 2475 | TWD11.40 | TWD285.00 |
| 2500 + | TWD11.10 | TWD277.50 |
*price indicative
- RS Stock No.:
- 133-3295
- Mfr. Part No.:
- RQ3G100GNTB
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 27A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | RQ3G100GN | |
| Package Type | HSMT | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 18.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 15W | |
| Typical Gate Charge Qg @ Vgs | 8.4nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.85mm | |
| Standards/Approvals | RoHS | |
| Width | 3.1 mm | |
| Length | 3.3mm | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 27A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series RQ3G100GN | ||
Package Type HSMT | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 18.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 15W | ||
Typical Gate Charge Qg @ Vgs 8.4nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Height 0.85mm | ||
Standards/Approvals RoHS | ||
Width 3.1 mm | ||
Length 3.3mm | ||
- COO (Country of Origin):
- JP
N-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
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