ROHM QH8MA3 Type N, Type P-Channel MOSFET, 7 A, 30 V Enhancement, 8-Pin TSMT QH8MA3TCR
- RS Stock No.:
- 264-3774
- Mfr. Part No.:
- QH8MA3TCR
- Manufacturer:
- ROHM
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 10 units)*
TWD193.00
(exc. GST)
TWD202.60
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 2,870 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | TWD19.30 | TWD193.00 |
| 50 - 90 | TWD19.00 | TWD190.00 |
| 100 - 240 | TWD14.80 | TWD148.00 |
| 250 - 990 | TWD14.40 | TWD144.00 |
| 1000 + | TWD9.60 | TWD96.00 |
*price indicative
- RS Stock No.:
- 264-3774
- Mfr. Part No.:
- QH8MA3TCR
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N, Type P | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TSMT | |
| Series | QH8MA3 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 29mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 7.2nC | |
| Maximum Power Dissipation Pd | 2.5W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, Pb-free lead plating | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type N, Type P | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TSMT | ||
Series QH8MA3 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 29mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 7.2nC | ||
Maximum Power Dissipation Pd 2.5W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, Pb-free lead plating | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TH
The ROHM middle power MOSFET is suitable for switching power supply, it is small surface mount package and Pb-free lead plating and RoHS compliant.
Low on resistance
Halogen free
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