ROHM Dual 2 Type N, Type P-Channel MOSFET, 7 A, 30 V Enhancement, 9-Pin DFN

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Subtotal (1 reel of 1000 units)*

TWD14,200.00

(exc. GST)

TWD14,910.00

(inc. GST)

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Units
Per unit
Per Reel*
1000 - 4000TWD14.20TWD14,200.00
5000 +TWD13.90TWD13,900.00

*price indicative

RS Stock No.:
223-6202
Mfr. Part No.:
HS8MA2TCR1
Manufacturer:
ROHM
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Brand

ROHM

Channel Type

Type N, Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

7A

Maximum Drain Source Voltage Vds

30V

Package Type

DFN

Mount Type

Surface

Pin Count

9

Maximum Drain Source Resistance Rds

0.08Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

7.8nC

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

4W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1.2V

Transistor Configuration

Dual

Maximum Operating Temperature

150°C

Length

3.3mm

Height

800μm

Width

3.3mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

The ROHM small signal MOSFET has TSMT8 package type. It is mainly used for switching.

Low on - resistance

Small surface mount package

Pb-free plating, RoHS compliant

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