ROHM Dual 2 Type N, Type P-Channel MOSFET, 7 A, 30 V Enhancement, 9-Pin DFN HS8MA2TCR1
- RS Stock No.:
- 223-6203
- Mfr. Part No.:
- HS8MA2TCR1
- Manufacturer:
- ROHM
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 25 units)*
TWD570.00
(exc. GST)
TWD598.50
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 75 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | TWD22.80 | TWD570.00 |
| 50 - 75 | TWD22.30 | TWD557.50 |
| 100 - 225 | TWD21.80 | TWD545.00 |
| 250 - 475 | TWD21.20 | TWD530.00 |
| 500 + | TWD20.70 | TWD517.50 |
*price indicative
- RS Stock No.:
- 223-6203
- Mfr. Part No.:
- HS8MA2TCR1
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N, Type P | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 9 | |
| Maximum Drain Source Resistance Rds | 0.08Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 7.8nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 4W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Height | 0.8mm | |
| Width | 3.3 mm | |
| Length | 3.3mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type N, Type P | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 9 | ||
Maximum Drain Source Resistance Rds 0.08Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 7.8nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 4W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Height 0.8mm | ||
Width 3.3 mm | ||
Length 3.3mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The ROHM small signal MOSFET has TSMT8 package type. It is mainly used for switching.
Low on - resistance
Small surface mount package
Pb-free plating, RoHS compliant
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