ROHM Dual 2 Type N, Type P-Channel MOSFET, 7 A, 30 V Enhancement, 9-Pin DFN HS8MA2TCR1

The image is for reference only, please refer to product details and specifications

Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
Packaging Options:
RS Stock No.:
223-6203
Mfr. Part No.:
HS8MA2TCR1
Manufacturer:
ROHM
Find similar products by selecting one or more attributes.
Select all

Brand

ROHM

Channel Type

Type N, Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

7A

Maximum Drain Source Voltage Vds

30V

Package Type

DFN

Mount Type

Surface

Pin Count

9

Maximum Drain Source Resistance Rds

0.08Ω

Channel Mode

Enhancement

Forward Voltage Vf

-1.2V

Maximum Power Dissipation Pd

4W

Typical Gate Charge Qg @ Vgs

7.8nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Transistor Configuration

Dual

Height

0.8mm

Standards/Approvals

No

Length

3.3mm

Width

3.3 mm

Number of Elements per Chip

2

Automotive Standard

No

The ROHM small signal MOSFET has TSMT8 package type. It is mainly used for switching.

Low on - resistance

Small surface mount package

Pb-free plating, RoHS compliant

Related links