Infineon HEXFET N-Channel MOSFET, 270 A, 60 V Enhancement, 3-Pin TO-247 IRFP3006PBF
- RS Stock No.:
- 260-5868
- Mfr. Part No.:
- IRFP3006PBF
- Manufacturer:
- Infineon
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- RS Stock No.:
- 260-5868
- Mfr. Part No.:
- IRFP3006PBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 270A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-247 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 375W | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 200nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.87mm | |
| Height | 20.7mm | |
| Width | 5.31mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 270A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-247 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 375W | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 200nC | ||
Maximum Operating Temperature 175°C | ||
Length 15.87mm | ||
Height 20.7mm | ||
Width 5.31mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 270A Maximum Continuous Drain Current, 60V Maximum Drain Source Voltage - IRFP3006PBF
This high-performance MOSFET is a critical component for modern electronic applications, designed with enhanced efficiency and reliability in mind. The dimensions of this TO-247 package include a length of 15.87mm, width of 5.31mm, and height of 20.7mm. It operates effectively in a variety of environments and contributes significant value in power management situations.
Features & Benefits
• High continuous drain current rated at 270A for demanding requirements
• 60V drain-source capability for versatile usage
• Maximum power dissipation of 375W supports robust performance
• Enhanced avalanche capability for better system protection
• Through-hole mounting ensures solid and dependable installation
Applications
• Utilised in high-efficiency synchronous rectification systems
• Ideal for uninterruptible power supplies to ensure reliability
• Effective in high-speed power switching
• Suitable for hard-switched and high-frequency circuitry
What thermal performance can be expected under continuous operating conditions?
With a maximum operating temperature of +175°C, it reliably handles high thermal loads, while the thermal resistance from junction to case supports efficient heat dissipation.
How does the gate threshold voltage contribute to its performance in circuits?
It features a maximum gate threshold voltage of 4V, ensuring that control signals activate the MOSFET effectively, providing synergy with lower voltage control circuits.
What are the implications of the low Rds(on) for circuit efficiency?
A low on-resistance of 2.5mΩ significantly reduces energy losses, enhancing overall circuit efficiency, especially in power-intensive applications, which translates into lower heat generation and improved performance sustainability.
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