Infineon HEXFET Type N-Channel MOSFET, 270 A, 60 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 688-7213
- Distrelec Article No.:
- 304-43-458
- Mfr. Part No.:
- IRLB3036PBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
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View bulk pricing optionsSubtotal (1 pack of 2 units)*
TWD357.00
(exc. GST)
TWD374.84
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- 4 unit(s) shipping from August 20, 2026
- Plus 1,000 unit(s) shipping from December 10, 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 12 | TWD178.50 | TWD357.00 |
| 14 + | TWD164.50 | TWD329.00 |
*price indicative
- RS Stock No.:
- 688-7213
- Distrelec Article No.:
- 304-43-458
- Mfr. Part No.:
- IRLB3036PBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 270A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 91nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 380W | |
| Maximum Operating Temperature | 175°C | |
| Height | 9.02mm | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 270A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 91nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 380W | ||
Maximum Operating Temperature 175°C | ||
Height 9.02mm | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 60V Maximum Drain Source Voltage, 270A Maximum Continuous Drain Current - IRLB3036PBF
This MOSFET is a power-switching transistor designed for high-current, low-loss switching in industrial environments. It is an N-channel enhancement device housed in a through-hole TO-220 package, intended for applications requiring substantial continuous drain current and robust thermal endurance across a wide ambient range.
Features and Benefits:
• Very low on-resistance 2 mΩ for reduced conduction losses
• High continuous drain current 270A to handle heavy loads
• 380W maximum power dissipation for high-power switching
• 60V drain-source voltage rating for moderate-voltage systems
• Typical gate charge 91 nC enabling predictable switching behaviour
• High continuous drain current 270A to handle heavy loads
• 380W maximum power dissipation for high-power switching
• 60V drain-source voltage rating for moderate-voltage systems
• Typical gate charge 91 nC enabling predictable switching behaviour
Applications
• Suitable for motor-drive stages in industrial equipment
• Ideal for power supplies and DC-DC converters
• Used with high-current switching in battery management
• Can be used for inverter output stages in medium-voltage systems
• Ideal for power supplies and DC-DC converters
• Used with high-current switching in battery management
• Can be used for inverter output stages in medium-voltage systems
What gate voltage limits must be observed?
The device must not exceed ±16V between gate and source to avoid gate-oxide stress.
How does thermal range affect deployment?
It operates across -55 °C to 175 °C, permitting use in harsh thermal conditions and elevated junction scenarios.
What is the forward conduction characteristic when the body diode conducts?
The forward voltage is typically 1.3V during diode conduction, influencing loss calculations in synchronous or freewheeling intervals.
What package and mounting considerations apply for heat dissipation?
It is supplied in a TO-220 through-hole format which facilitates direct heatsink attachment for improved thermal management.
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