MPN

Infineon HEXFET N-Channel MOSFET, 270 A, 60 V TO-263 IRFS3006TRLPBF

Name: Infineon HEXFET N-Channel MOSFET, 270 A, 60 V TO-263 IRFS3006TRLPBF
Brand: Infineon
SKU: 257-9416
Availability: InStock

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Subtotal (1 pack of 2 units)*

TWD402.00

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TWD422.10

(inc. GST)

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Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	270A
	Maximum Drain Source Voltage Vds	60V
	Package Type	TO-263
	Series	HEXFET
	Mount Type	Surface
	Maximum Drain Source Resistance Rds	2.5mΩ
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	375W
	Typical Gate Charge Qg @ Vgs	200nC
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 270A
	Maximum Drain Source Voltage Vds 60V
	Package Type TO-263
	Series HEXFET
	Mount Type Surface
	Maximum Drain Source Resistance Rds 2.5mΩ
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 375W
	Typical Gate Charge Qg @ Vgs 200nC
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

The Infineon IRFS series is the 60V single n channel HEXFET power mosfet in a D2 Pak package.

Improved gate, avalanche and dynamic dV/dt ruggedness

Fully characterized capacitance and avalanche SOA

Enhanced body diode dV/dt and dI/dt capability lead free

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