Infineon IPW Type N-Channel MOSFET, 69 A, 650 V, 3-Pin PG-TO-247
- RS Stock No.:
- 258-3910
- Mfr. Part No.:
- IPW65R029CFD7XKSA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 30 units)*
TWD9,663.00
(exc. GST)
TWD10,146.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from September 06, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | TWD322.10 | TWD9,663.00 |
| 60 - 60 | TWD315.70 | TWD9,471.00 |
| 90 + | TWD309.30 | TWD9,279.00 |
*price indicative
- RS Stock No.:
- 258-3910
- Mfr. Part No.:
- IPW65R029CFD7XKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 69A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PG-TO-247 | |
| Series | IPW | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 29mΩ | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 305W | |
| Typical Gate Charge Qg @ Vgs | 145nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 69A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PG-TO-247 | ||
Series IPW | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 29mΩ | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 305W | ||
Typical Gate Charge Qg @ Vgs 145nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon 650V CoolMOS CFD7 super junction MOSFET in TO-247 package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behaviour, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage.
650V breakdown voltage
Significantly reduced switching losses compared to competition
Lowest RDS(on) dependency over temperature
Excellent hard-commutation ruggedness
Extra safety margin for designs with increased bus voltage
Enabling increased power density
Related links
- Infineon IPW Type N-Channel MOSFET 650 V, 3-Pin PG-TO-247 IPW65R029CFD7XKSA1
- Infineon IPW Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO-247
- Infineon IPW Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO-247 IPW65R099CFD7AXKSA1
- Infineon IPW Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO-247
- Infineon IPW Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO-247 IPW65R115CFD7AXKSA1
- Infineon IPW Type N-Channel MOSFET 600 V Enhancement, 3-Pin PG-TO-247 IPW60R037CM8XKSA1
- Infineon IPW Type N-Channel Power Transistor 600 V Enhancement, 4-Pin PG-TO-247 IPW60R016CM8XKSA1
- Infineon IPW Type N-Channel MOSFET 650 V, 3-Pin TO-247