Infineon IPW Type N-Channel Power Transistor, 123 A, 600 V Enhancement, 4-Pin PG-TO-247 IPW60R016CM8XKSA1
- RS Stock No.:
- 349-265
- Mfr. Part No.:
- IPW60R016CM8XKSA1
- Manufacturer:
- Infineon
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TWD625.00
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TWD656.25
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Units | Per unit |
|---|---|
| 1 - 9 | TWD625.00 |
| 10 - 99 | TWD563.00 |
| 100 + | TWD519.00 |
*price indicative
- RS Stock No.:
- 349-265
- Mfr. Part No.:
- IPW60R016CM8XKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 123A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | PG-TO-247 | |
| Series | IPW | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 16mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 521W | |
| Typical Gate Charge Qg @ Vgs | 171nC | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, JEDEC | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 123A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type PG-TO-247 | ||
Series IPW | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 16mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 521W | ||
Typical Gate Charge Qg @ Vgs 171nC | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, JEDEC | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Infineon IPW Series Power Transistor, 600V Drain Source Voltage, 123A Continuous Drain Current - IPW60R016CM8XKSA1
This power transistor is a high-voltage, N-channel enhancement MOSFET designed for power conversion and switching tasks in demanding electrical systems. It is supplied in a through-hole PG-TO-247 package and intended for applications requiring substantial current handling and elevated temperature operation. The device complies with RoHS and JEDEC standards and is suitable where robust thermal tolerance is necessary.
Features and Benefits:
• 600V rating enables high-voltage switching applications
• 123A continuous current supports heavy-load operation
• 16 mΩ low Rds(on) reduces conduction losses
• 521W maximum dissipation allows significant power handling
• 171 nC gate charge facilitates predictable switching control
• -55 °C to 175 °C range permits high-temperature deployment
• 123A continuous current supports heavy-load operation
• 16 mΩ low Rds(on) reduces conduction losses
• 521W maximum dissipation allows significant power handling
• 171 nC gate charge facilitates predictable switching control
• -55 °C to 175 °C range permits high-temperature deployment
Applications
• Suitable for industrial motor-drive power stages
• Ideal for high-voltage power supplies and converters
• Used for inverter circuits requiring high current
• Can be used for switch-mode power
• Suitable for rugged through-hole mounting designs
• Ideal for high-voltage power supplies and converters
• Used for inverter circuits requiring high current
• Can be used for switch-mode power
• Suitable for rugged through-hole mounting designs
What gate-drive considerations should be taken into account?
The typical total gate charge is 171 nC, so gate-driver capability and rise/fall control are important to manage switching losses and electromagnetic interference.
How does the device perform thermally under load?
It can dissipate up to 521 W
thermal management such as heatsinking and PCB layout should be designed to handle that dissipation at expected ambient temperatures.
What voltage and current limits must designers respect?
The components maximum drain-source voltage is 600V and the continuous drain current rating is 123 A, so system margins and transient conditions must be considered to avoid overstress.
Are there mounting or package-related implementation notes?
The PG-TO-247 through-hole format requires appropriate hole spacing and mechanical support and allows robust heatsink attachment for high-power use.
Related links
- Infineon IPW Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO-247
- Infineon IPW Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO-247
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