Infineon IPW Type N-Channel Power Transistor, 123 A, 600 V Enhancement, 4-Pin PG-TO-247 IPW60R016CM8XKSA1

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TWD625.00

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TWD656.25

(inc. GST)

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1 - 9TWD625.00
10 - 99TWD563.00
100 +TWD519.00

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RS Stock No.:
349-265
Mfr. Part No.:
IPW60R016CM8XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

Power Transistor

Maximum Continuous Drain Current Id

123A

Maximum Drain Source Voltage Vds

600V

Package Type

PG-TO-247

Series

IPW

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

16mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

521W

Typical Gate Charge Qg @ Vgs

171nC

Forward Voltage Vf

0.9V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS, JEDEC

Automotive Standard

No

COO (Country of Origin):
CN

Infineon IPW Series Power Transistor, 600V Drain Source Voltage, 123A Continuous Drain Current - IPW60R016CM8XKSA1


This power transistor is a high-voltage, N-channel enhancement MOSFET designed for power conversion and switching tasks in demanding electrical systems. It is supplied in a through-hole PG-TO-247 package and intended for applications requiring substantial current handling and elevated temperature operation. The device complies with RoHS and JEDEC standards and is suitable where robust thermal tolerance is necessary.

Features and Benefits:


• 600V rating enables high-voltage switching applications
• 123A continuous current supports heavy-load operation
• 16 mΩ low Rds(on) reduces conduction losses
• 521W maximum dissipation allows significant power handling
• 171 nC gate charge facilitates predictable switching control
• -55 °C to 175 °C range permits high-temperature deployment

Applications


• Suitable for industrial motor-drive power stages
• Ideal for high-voltage power supplies and converters
• Used for inverter circuits requiring high current
• Can be used for switch-mode power
• Suitable for rugged through-hole mounting designs

What gate-drive considerations should be taken into account?


The typical total gate charge is 171 nC, so gate-driver capability and rise/fall control are important to manage switching losses and electromagnetic interference.

How does the device perform thermally under load?


It can dissipate up to 521 W

thermal management such as heatsinking and PCB layout should be designed to handle that dissipation at expected ambient temperatures.

What voltage and current limits must designers respect?


The component’s maximum drain-source voltage is 600V and the continuous drain current rating is 123 A, so system margins and transient conditions must be considered to avoid overstress.

Are there mounting or package-related implementation notes?


The PG-TO-247 through-hole format requires appropriate hole spacing and mechanical support and allows robust heatsink attachment for high-power use.

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