Infineon IPW Type N-Channel MOSFET, 64 A, 600 V Enhancement, 3-Pin PG-TO-247 IPW60R037CM8XKSA1
- RS Stock No.:
- 349-266
- Mfr. Part No.:
- IPW60R037CM8XKSA1
- Manufacturer:
- Infineon
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TWD339.00
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TWD355.95
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|---|---|
| 1 - 9 | TWD339.00 |
| 10 - 99 | TWD306.00 |
| 100 - 499 | TWD282.00 |
| 500 - 999 | TWD261.00 |
| 1000 + | TWD234.00 |
*price indicative
- RS Stock No.:
- 349-266
- Mfr. Part No.:
- IPW60R037CM8XKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 64A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | PG-TO-247 | |
| Series | IPW | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 37mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 329W | |
| Typical Gate Charge Qg @ Vgs | 79nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC for Industrial Applications, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 64A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type PG-TO-247 | ||
Series IPW | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 37mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 329W | ||
Typical Gate Charge Qg @ Vgs 79nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC for Industrial Applications, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Infineon IPW Series MOSFET, 600V Drain Source Voltage, 64A Continuous Drain Current - IPW60R037CM8XKSA1
This MOSFET is a high-voltage N-channel transistor designed for power switching and converter roles in industrial environments. It operates across a broad temperature range and is supplied in a through-hole PG-TO-247 package suitable for conventional heatsinking and assembly methods. The device is intended for applications requiring substantial current handling and robust gate-drive characteristics while conforming to industry manufacturing standards.
Features and Benefits:
• 600V drain voltage for high-voltage switching capability
• 64A continuous drain current for heavy-load operation
• 37 mΩ RDS(on) for reduced conduction losses
• 329W power dissipation for sustained thermal performance
• 79 nC typical gate charge enabling predictable drive requirements
• 64A continuous drain current for heavy-load operation
• 37 mΩ RDS(on) for reduced conduction losses
• 329W power dissipation for sustained thermal performance
• 79 nC typical gate charge enabling predictable drive requirements
Applications
• Suitable for power supplies and DC-DC converter stages
• Ideal for high-voltage motor drive front ends
• Used with mid-to-high power switch-mode power supplies
• Can be used for industrial inverter and UPS circuits
• Ideal for high-voltage motor drive front ends
• Used with mid-to-high power switch-mode power supplies
• Can be used for industrial inverter and UPS circuits
What gate-drive considerations should I allow for?
The device exhibits a typical gate charge of 79 nC, so drivers must provide sufficient charge transfer at the targeted switching frequency to achieve desired transition speeds and minimise switching losses.
How does the thermal range affect deployment options?
With an operating range from -55 °C to 150 °C, it can be used in environments with wide temperature fluctuations, permitting placement closer to heat-generating components when adequate cooling is provided.
What mounting and thermal-management approach is suitable?
The PG-TO-247 through-hole format accepts standard heatsinks and screw mounting
ensure proper thermal interface material and deliberate PCB thermal design to exploit the 329W dissipation capability.
Are there limits on gate or drain voltages for safe operation?
The maximum gate-to-source rating is 20V and the maximum drain-to-source rating is 600V, so system designs must prevent excursions beyond these thresholds to avoid device stress.
Related links
- Infineon IPW Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO-247
- Infineon IPW Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO-247
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- Infineon IPW Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO-247 IPW65R099CFD7AXKSA1
- Infineon IPW Type N-Channel MOSFET 650 V, 3-Pin PG-TO-247
- Infineon IPW Type N-Channel Power Transistor 600 V Enhancement, 4-Pin PG-TO-247 IPW60R016CM8XKSA1
- Infineon IPW Type N-Channel MOSFET 650 V, 3-Pin PG-TO-247 IPW65R029CFD7XKSA1
- Infineon IPW Type N-Channel MOSFET 600 V, 3-Pin TO-247