Infineon Dual N Channel Logic Level Enhancement Mode IPG20N06S4L-11 N-Channel MOSFET, 20 A, 60 V TDSON
- RS Stock No.:
- 258-3878
- Mfr. Part No.:
- IPG20N06S4L11ATMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Subtotal (1 reel of 5000 units)*
TWD142,500.00
(exc. GST)
TWD149,600.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
- Shipping from September 28, 2026
Units | Per unit | Per Reel* |
|---|---|---|
| 5000 - 5000 | TWD28.50 | TWD142,500.00 |
| 10000 + | TWD27.70 | TWD138,500.00 |
*price indicative
- RS Stock No.:
- 258-3878
- Mfr. Part No.:
- IPG20N06S4L11ATMA1
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TDSON | |
| Series | IPG20N06S4L-11 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Typical Gate Charge Qg @ Vgs | 53nC | |
| Maximum Power Dissipation Pd | 65W | |
| Transistor Configuration | Dual N Channel Logic Level Enhancement Mode | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TDSON | ||
Series IPG20N06S4L-11 | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 16V | ||
Typical Gate Charge Qg @ Vgs 53nC | ||
Maximum Power Dissipation Pd 65W | ||
Transistor Configuration Dual N Channel Logic Level Enhancement Mode | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard AEC-Q101 | ||
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