Infineon Dual N Channel Logic Level Enhancement Mode OptiMOSTM-T2 Dual N-Channel MOSFET, 20 A, 60 V Enhancement, 8-Pin
- RS Stock No.:
- 258-3881
- Mfr. Part No.:
- IPG20N06S4L11ATMA2
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 2 units)*
TWD136.00
(exc. GST)
TWD142.80
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 4,996 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | TWD68.00 | TWD136.00 |
| 10 - 98 | TWD65.50 | TWD131.00 |
| 100 - 248 | TWD61.00 | TWD122.00 |
| 250 - 498 | TWD56.00 | TWD112.00 |
| 500 + | TWD51.50 | TWD103.00 |
*price indicative
- RS Stock No.:
- 258-3881
- Mfr. Part No.:
- IPG20N06S4L11ATMA2
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Dual N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TDSON | |
| Series | OptiMOSTM-T2 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Maximum Power Dissipation Pd | 65W | |
| Maximum Gate Source Voltage Vgs | ±16 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Transistor Configuration | Dual N Channel Logic Level Enhancement Mode | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC Q101 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Dual N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TDSON | ||
Series OptiMOSTM-T2 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Maximum Power Dissipation Pd 65W | ||
Maximum Gate Source Voltage Vgs ±16 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Transistor Configuration Dual N Channel Logic Level Enhancement Mode | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC Q101 | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS-T2 power-transistor is dual super S08 can replace multiple DPAKs for significant PCB area savings and system level cost reduction. Same thermal and electrical performance as a DPAK with the same die size.
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)
100% Avalanche tested
Related links
- Infineon Dual N Channel Logic Level Enhancement Mode OptiMOSTM-T2 Dual N-Channel MOSFET 60 V Enhancement, 8-Pin
- Infineon Dual N Channel Logic Level Enhancement Mode OptiMOSTM-T2 Type N-Channel MOSFET 100 V Dual N, 8-Pin TDSON
- Infineon Dual N Channel Logic Level Enhancement Mode OptiMOSTM-T2 2 Type N-Channel MOSFET 60 V N, 8-Pin SuperSO8
- Infineon Dual N Channel Logic Level Enhancement Mode OptiMOS-T2 2 Type N-Channel MOSFET 60 V Enhancement, 8-Pin
- Infineon Dual N Channel Logic Level Enhancement Mode IPG20N06S4L-11 Type N-Channel MOSFET 60 V TDSON
- Infineon Dual N Channel Normal Level Enhancement Mode IPG16N10S4-61 Type N-Channel MOSFET 100 V Dual N, 8-Pin
- Infineon Dual N Channel Normal Level IPG 2 Type N-Channel MOSFET 40 V Enhancement, 8-Pin SuperSO
- Infineon Dual N Channel OptiMOSTM 2 Type N-Channel MOSFET & Diode 30 V, 8-Pin SuperSO8 5 x 6