Infineon Dual N Channel Logic Level Enhancement Mode OptiMOSTM-T2 2 Type N-Channel MOSFET, 20 A, 60 V N, 8-Pin SuperSO8

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Subtotal (1 pack of 5 units)*

TWD144.00

(exc. GST)

TWD151.20

(inc. GST)

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Units
Per unit
Per Pack*
5 - 5TWD28.80TWD144.00
10 - 95TWD26.00TWD130.00
100 - 245TWD23.40TWD117.00
250 - 495TWD20.80TWD104.00
500 +TWD18.60TWD93.00

*price indicative

Packaging Options:
RS Stock No.:
249-6921
Mfr. Part No.:
IPG20N06S4L26ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

60V

Package Type

SuperSO8 5 x 6

Series

OptiMOSTM-T2

Pin Count

8

Channel Mode

N

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

33W

Maximum Gate Source Voltage Vgs

±16 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

15nC

Transistor Configuration

Dual N Channel Logic Level Enhancement Mode

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS Compliant

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

The Infineon OptiMOS is power MOSFET for automotive applications. Operating channel is N. It is AEC Q101 qualified. MSL1 up to 260°C peak reflow. Green Product (RoHS compliant) and it is 100% Avalanche tested.

175°C operating temperature

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