Infineon HEXFET N-Channel MOSFET, 1.6 A, 100 V SOT-223 IRFL4310TRPBF
- RS Stock No.:
- 257-9394
- Mfr. Part No.:
- IRFL4310TRPBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
TWD226.00
(exc. GST)
TWD237.30
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 1,770 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | TWD22.60 | TWD226.00 |
| 50 - 90 | TWD21.60 | TWD216.00 |
| 100 - 240 | TWD20.40 | TWD204.00 |
| 250 - 990 | TWD19.00 | TWD190.00 |
| 1000 + | TWD17.20 | TWD172.00 |
*price indicative
- RS Stock No.:
- 257-9394
- Mfr. Part No.:
- IRFL4310TRPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.6A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | SOT-223 | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 15mΩ | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Maximum Power Dissipation Pd | 1W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | Lead-Free | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.6A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type SOT-223 | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 15mΩ | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Maximum Power Dissipation Pd 1W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals Lead-Free | ||
Automotive Standard No | ||
The Infineon IRFL series is the 100V single n channel IR mosfet in a SOT-223 package. The IR mosfet family of power mosfets utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as dc motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below 100 kHz
Industry standard surface mount package
Related links
- Infineon HEXFET Type N-Channel MOSFET 100 V SOT-223
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-23 IRLML0100TRPBF
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 4-Pin SOT-223
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 4-Pin SOT-223 IRLL024NTRPBF
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 4-Pin SOT-223 IRFL4105TRPBF
- Infineon HEXFET Fifth Generation Type N-Channel MOSFET 55 V SOT-223
- Infineon HEXFET Fifth Generation Type N-Channel MOSFET 55 V SOT-223 IRFL014NTRPBF