Infineon HEXFET N-Channel MOSFET, 1.6 A, 100 V Enhancement, 3-Pin SOT-23 IRLML0100TRPBF
- RS Stock No.:
- 725-9350
- Distrelec Article No.:
- 304-45-311
- Mfr. Part No.:
- IRLML0100TRPBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Subtotal (10 units, in packs of 10)*
TWD143.00
(exc. GST)
TWD150.20
(inc. GST)
FREE delivery for orders over NT$1,300.00
- 50 unit(s) ready to ship from another location
- Plus 2,450 unit(s) shipping from November 19, 2026
- Plus 3,000 unit(s) shipping from February 25, 2027
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 740 | TWD14.30 | TWD143.00 |
| 750 - 1490 | TWD13.80 | TWD138.00 |
| 1500 + | TWD12.80 | TWD128.00 |
*price indicative
- RS Stock No.:
- 725-9350
- Distrelec Article No.:
- 304-45-311
- Mfr. Part No.:
- IRLML0100TRPBF
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 1.6A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-23 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 235mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -16V, +16V | |
| Typical Gate Charge Qg @ Vgs | 2.5nC | |
| Maximum Power Dissipation Pd | 1.3W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.04mm | |
| Standards/Approvals | No | |
| Height | 1.02mm | |
| Width | 1.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 1.6A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-23 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 235mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -16V, +16V | ||
Typical Gate Charge Qg @ Vgs 2.5nC | ||
Maximum Power Dissipation Pd 1.3W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 150°C | ||
Length 3.04mm | ||
Standards/Approvals No | ||
Height 1.02mm | ||
Width 1.4mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 100V Maximum Drain Source Voltage, 1.6A Maximum Continuous Drain Current - IRLML0100TRPBF
Features and Benefits:
• 1.6A continuous drain current supports moderate load currents
• 235mΩ RDS(on) reduces conduction losses during operation
• 2.5nC typical gate charge ensures efficient switching performance
• 1.3W maximum power dissipation allows sustained thermal load handling
• 16V gate-source tolerance provides margin for gate drive voltages
Applications
• Ideal for battery management and power distribution
• Used with motor-control driver circuits in low-power systems
• Can be used for LED driver switching elements
• Suitable for general-purpose switching in compact devices
What environmental temperature range can it withstand during operation?
What mounting and package considerations should designers plan for?
How does its forward voltage affect switching in rectifier or synchronous applications?
What pin count and gate-drive implications must be considered?
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