Infineon HEXFET Type N-Channel MOSFET, 1.6 A, 100 V Enhancement, 3-Pin SOT-23 IRLML0100TRPBF
- RS Stock No.:
- 725-9350
- Distrelec Article No.:
- 304-45-311
- Mfr. Part No.:
- IRLML0100TRPBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
TWD143.00
(exc. GST)
TWD150.20
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 160 unit(s) shipping from August 17, 2026
- Plus 2,950 unit(s) shipping from October 08, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 740 | TWD14.30 | TWD143.00 |
| 750 - 1490 | TWD13.80 | TWD138.00 |
| 1500 + | TWD12.80 | TWD128.00 |
*price indicative
- RS Stock No.:
- 725-9350
- Distrelec Article No.:
- 304-45-311
- Mfr. Part No.:
- IRLML0100TRPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.6A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 235mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 1.3W | |
| Typical Gate Charge Qg @ Vgs | 2.5nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.04mm | |
| Height | 1.02mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.6A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 235mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 1.3W | ||
Typical Gate Charge Qg @ Vgs 2.5nC | ||
Maximum Operating Temperature 150°C | ||
Length 3.04mm | ||
Height 1.02mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 100V Maximum Drain Source Voltage, 1.6A Maximum Continuous Drain Current - IRLML0100TRPBF
This MOSFET is a surface-mount N-channel enhancement transistor designed for switching and power-control tasks in compact electronic assemblies. It operates across a wide temperature span and is intended for low-to-moderate current applications where a balance of voltage capability and small footprint is required.
Features and Benefits:
• 100V drain-source rating enables high-voltage switching capability
• 1.6A continuous drain current supports moderate load currents
• 235mΩ RDS(on) reduces conduction losses during operation
• 2.5nC typical gate charge ensures efficient switching performance
• 1.3W maximum power dissipation allows sustained thermal load handling
• 16V gate-source tolerance provides margin for gate drive voltages
• 1.6A continuous drain current supports moderate load currents
• 235mΩ RDS(on) reduces conduction losses during operation
• 2.5nC typical gate charge ensures efficient switching performance
• 1.3W maximum power dissipation allows sustained thermal load handling
• 16V gate-source tolerance provides margin for gate drive voltages
Applications
• Suitable for DC-DC converter switching stages
• Ideal for battery management and power distribution
• Used with motor-control driver circuits in low-power systems
• Can be used for LED driver switching elements
• Suitable for general-purpose switching in compact devices
• Ideal for battery management and power distribution
• Used with motor-control driver circuits in low-power systems
• Can be used for LED driver switching elements
• Suitable for general-purpose switching in compact devices
What environmental temperature range can it withstand during operation?
It is rated to operate from -55°C up to 150°C, covering demanding thermal conditions.
What mounting and package considerations should designers plan for?
It comes in a SOT-23 surface-mount package, allowing automated assembly and dense PCB placement.
How does its forward voltage affect switching in rectifier or synchronous applications?
The device exhibits a forward voltage of 1.3V which influences conduction drop when used as a switching transistor in low-voltage circuits.
What pin count and gate-drive implications must be considered?
With three pins, standard gate, drain and source connections apply and a gate drive below the 16V rating should be used to avoid overstress.
Related links
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 100 V SOT-223 IRFL4310TRPBF
- Infineon HEXFET Type N-Channel MOSFET 100 V SOT-223
- DiodesZetex DMN Type N-Channel MOSFET 100 V Enhancement, 4-Pin SOT-23 DMN10H220L-7
- DiodesZetex DMN Type N-Channel MOSFET 100 V Enhancement, 4-Pin SOT-23
- onsemi PowerTrench Type N-Channel MOSFET 150 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- onsemi PowerTrench Type N-Channel MOSFET 150 V Enhancement, 3-Pin SOT-23 FDN86246