DiodesZetex DMN Type N-Channel MOSFET, 1.6 A, 100 V Enhancement, 4-Pin SOT-23
- RS Stock No.:
- 165-8362
- Mfr. Part No.:
- DMN10H220L-7
- Manufacturer:
- DiodesZetex
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 reel of 3000 units)*
TWD13,200.00
(exc. GST)
TWD13,860.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from August 03, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | TWD4.40 | TWD13,200.00 |
| 6000 + | TWD4.30 | TWD12,900.00 |
*price indicative
- RS Stock No.:
- 165-8362
- Mfr. Part No.:
- DMN10H220L-7
- Manufacturer:
- DiodesZetex
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.6A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-23 | |
| Series | DMN | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 250mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 8.3nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Forward Voltage Vf | 0.7V | |
| Maximum Power Dissipation Pd | 1.3W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 1.4 mm | |
| Height | 1mm | |
| Length | 3mm | |
| Automotive Standard | AEC-Q200, AEC-Q100, AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.6A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-23 | ||
Series DMN | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 250mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 8.3nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Forward Voltage Vf 0.7V | ||
Maximum Power Dissipation Pd 1.3W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 1.4 mm | ||
Height 1mm | ||
Length 3mm | ||
Automotive Standard AEC-Q200, AEC-Q100, AEC-Q101 | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Related links
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