Infineon Half and Full Bridge (2X) Configuration BTN99x0LV 2 Type P, Type N-Channel MOSFET, 115 A, 40 V Dual, 7-Pin PG
- RS Stock No.:
- 249-3347
- Mfr. Part No.:
- BTN9990LVAUMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
TWD194.00
(exc. GST)
TWD203.70
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- 3,675 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | TWD194.00 |
| 10 - 99 | TWD175.00 |
| 100 - 249 | TWD158.00 |
| 250 - 499 | TWD140.00 |
| 500 + | TWD127.00 |
*price indicative
- RS Stock No.:
- 249-3347
- Mfr. Part No.:
- BTN9990LVAUMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P, Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 115A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | BTN99x0LV | |
| Package Type | PG HSOF-7 | |
| Mount Type | Surface Mount | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 9.6mΩ | |
| Channel Mode | Dual | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Half and Full Bridge (2X) Configuration | |
| Standards/Approvals | AEC-Q100/Q006 (Grade 1) | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q006, AEC-Q100 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P, Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 115A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series BTN99x0LV | ||
Package Type PG HSOF-7 | ||
Mount Type Surface Mount | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 9.6mΩ | ||
Channel Mode Dual | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Half and Full Bridge (2X) Configuration | ||
Standards/Approvals AEC-Q100/Q006 (Grade 1) | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q006, AEC-Q100 | ||
Infineon BTN99x0LV Series MOSFET, 40V Maximum Drain Source Voltage, 115A Maximum Continuous Drain Current - BTN9990LVAUMA1
This MOSFET is a dual-channel transistor designed for switching and bridge configurations in automotive environments. It supports both half-bridge and full-bridge arrangements and is supplied in a PG HSOF-7 package suitable for modules requiring compact, dual-element power devices. The device is rated for operation across an extended temperature range and conforms to automotive-grade standards for use in vehicle systems.
Features and Benefits:
• 40V maximum drain voltage for common automotive system voltages
• 115A continuous drain current for high-current switching
• 9.6mΩ Rds(on) for reduced conduction losses
• ±20V gate tolerance to protect gate circuitry
• Dual N and P channel arrangement enabling complementary stages
• 150°C maximum operating temperature for thermal headroom
• 115A continuous drain current for high-current switching
• 9.6mΩ Rds(on) for reduced conduction losses
• ±20V gate tolerance to protect gate circuitry
• Dual N and P channel arrangement enabling complementary stages
• 150°C maximum operating temperature for thermal headroom
Applications
• Suitable for half and full bridge power stages in vehicles
• Ideal for DC motor drive inverter stages in automotive systems
• Used with complementary P and N channel configurations in H-bridges
• Can be used for high-current switching in battery management
• Used for power stages requiring automotive-grade components
• Ideal for DC motor drive inverter stages in automotive systems
• Used with complementary P and N channel configurations in H-bridges
• Can be used for high-current switching in battery management
• Used for power stages requiring automotive-grade components
What temperature extremes can this device tolerate in operation?
It can operate down to -40°C and up to 150°C.
How many transistor elements are present on each chip?
Each chip contains two elements arranged as a dual-channel device.
What package does it use for board mounting and thermal conduction?
The component is supplied in a PG HSOF-7 package.
Which automotive qualification levels does it satisfy?
It meets AEC-Q100 and AEC-Q006 automotive-grade approvals.
What channel types are integrated for complementary switching topologies?
The device includes both N-channel and P-channel types.
Related links
- Infineon Half and Full Bridge (2X) Configuration BTN99x0LV 2 Type P 115 A 7-Pin PG
- DiodesZetex Dual DMC2710 2 Type P 800 mA 6-Pin SOT-563 DMC2710UV-7
- Infineon CoolSiC N-Channel MOSFET 650 V Enhancement, 7-Pin PG-TO263-7 IMBG65R015M2HXTMA1
- Nexperia Dual NX3008CBKS 2 Type P 350 mA 6-Pin SC-88 NX3008CBKS,115
- onsemi NCV Type N 7 A 8-Pin SOIC-8 NCV8406DD1CR2G
- Vishay Dual TrenchFET 2 Type N 30 A 8-Pin SO-8 SQJ504EP-T1_GE3
- DiodesZetex Dual DMC2710 2 Type P 800 mA 6-Pin SOT-563
- DiodesZetex Dual DMC3016LDV 2 Type P 21 A 8-Pin PDI3333 DMC3016LDV-7