Vishay Siliconix Dual TrenchFET 2 Type N, Type P-Channel MOSFET, 30 A, 40 V Enhancement, 8-Pin SO-8 SQJ504EP-T1_GE3
- RS Stock No.:
- 178-3893
- Mfr. Part No.:
- SQJ504EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
The image is for reference only, please refer to product details and specifications
Subtotal (1 pack of 10 units)*
TWD385.00
(exc. GST)
TWD404.20
(inc. GST)
FREE delivery for orders over NT$1,300.00
- 30 left, ready to ship from another location
- Plus 1,410 left, shipping from February 02, 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 740 | TWD38.50 | TWD385.00 |
| 750 - 1490 | TWD37.50 | TWD375.00 |
| 1500 + | TWD37.00 | TWD370.00 |
*price indicative
- RS Stock No.:
- 178-3893
- Mfr. Part No.:
- SQJ504EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay Siliconix | |
| Product Type | MOSFET | |
| Channel Type | Type N, Type P | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SO-8 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 30mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 34W | |
| Typical Gate Charge Qg @ Vgs | 12.1nC | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 175°C | |
| Width | 5 mm | |
| Height | 1.07mm | |
| Length | 5.99mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay Siliconix | ||
Product Type MOSFET | ||
Channel Type Type N, Type P | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SO-8 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 30mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 34W | ||
Typical Gate Charge Qg @ Vgs 12.1nC | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 175°C | ||
Width 5 mm | ||
Height 1.07mm | ||
Length 5.99mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
RoHS Status: Exempt
- COO (Country of Origin):
- CN
Vishay MOSFET
Features and Benefits
Certifications
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