onsemi NCV Type N, Type P-Channel MOSFET, 65 V Dual, 8-Pin SOIC-8 NCV8406DD1CR2G
- RS Stock No.:
- 327-795
- Mfr. Part No.:
- NCV8406DD1CR2G
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 10 units)*
TWD313.00
(exc. GST)
TWD328.60
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 2,500 unit(s) shipping from August 31, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 90 | TWD31.30 | TWD313.00 |
| 100 - 240 | TWD29.70 | TWD297.00 |
| 250 - 490 | TWD27.50 | TWD275.00 |
| 500 - 990 | TWD25.40 | TWD254.00 |
| 1000 + | TWD24.40 | TWD244.00 |
*price indicative
- RS Stock No.:
- 327-795
- Mfr. Part No.:
- NCV8406DD1CR2G
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N, Type P | |
| Product Type | MOSFET | |
| Maximum Drain Source Voltage Vds | 65V | |
| Series | NCV | |
| Package Type | SOIC-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 210mΩ | |
| Channel Mode | Dual | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 14V | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 1.2W | |
| Maximum Operating Temperature | 150°C | |
| Length | 5mm | |
| Width | 4mm | |
| Standards/Approvals | RoHS, Pb-Free | |
| Height | 1.75mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N, Type P | ||
Product Type MOSFET | ||
Maximum Drain Source Voltage Vds 65V | ||
Series NCV | ||
Package Type SOIC-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 210mΩ | ||
Channel Mode Dual | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 14V | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 1.2W | ||
Maximum Operating Temperature 150°C | ||
Length 5mm | ||
Width 4mm | ||
Standards/Approvals RoHS, Pb-Free | ||
Height 1.75mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- PH
The ON Semiconductor Dual protected Low-Side Smart Discrete device offers comprehensive protection features, including overcurrent, over temperature, ESD, and integrated Drain-to-Gate clamping for overvoltage protection. It is designed for reliable performance in harsh automotive environments.
Short Circuit Protection
Thermal Shutdown with Automatic Restart
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