Microchip TN5325 Type N-Channel MOSFET, 10.3 A, 650 V Enhancement, 3-Pin TO-92 TN5325K1-G
- RS Stock No.:
- 239-5618
- Mfr. Part No.:
- TN5325K1-G
- Manufacturer:
- Microchip
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 25 units)*
TWD452.50
(exc. GST)
TWD475.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 2,975 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | TWD18.10 | TWD452.50 |
| 50 - 75 | TWD17.60 | TWD440.00 |
| 100 - 225 | TWD17.20 | TWD430.00 |
| 250 - 975 | TWD16.80 | TWD420.00 |
| 1000 + | TWD16.40 | TWD410.00 |
*price indicative
- RS Stock No.:
- 239-5618
- Mfr. Part No.:
- TN5325K1-G
- Manufacturer:
- Microchip
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10.3A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | TN5325 | |
| Package Type | TO-92 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 140W | |
| Forward Voltage Vf | 1.8V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10.3A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series TN5325 | ||
Package Type TO-92 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 140W | ||
Forward Voltage Vf 1.8V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Microchip TN5325 series of low-threshold, enhancement-mode (normally-off) transistor utilize a vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.
Low threshold of maximum 2V
High input impedance and high gain
Rise Time of 15 ns
Turn-off Delay Time of 25 ns
Fall Time of 25 ns
Related links
- Microchip TN5325 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-92
- Microchip TN5325 N-Channel Vertical DMOS FET-Channel Single MOSFETs 40 V Enhancement Mode, 3-Pin TO-92-3
- Nexperia Type N-Channel MOSFET 30 V Enhancement, 8-Pin MLPAK33 PXN010-30QLJ
- Nexperia Type N-Channel MOSFET 25 V Enhancement, 8-Pin MLPAK33 PXN6R2-25QLJ
- Nexperia Type N-Channel MOSFET 25 V Enhancement, 8-Pin MLPAK33 PXN7R7-25QLJ
- Nexperia Type N-Channel MOSFET 25 V Enhancement, 8-Pin MLPAK33
- Nexperia Type N-Channel MOSFET 30 V Enhancement, 8-Pin MLPAK33
- ROHM RYM002N05 Type N-Channel MOSFET 0.9 V N SOT-723 RYM002N05T2CL