Nexperia Type N-Channel MOSFET, 10.3 A, 25 V Enhancement, 8-Pin MLPAK33 PXN7R7-25QLJ
- RS Stock No.:
- 240-1997
- Mfr. Part No.:
- PXN7R7-25QLJ
- Manufacturer:
- Nexperia
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 25 units)*
TWD190.00
(exc. GST)
TWD199.50
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 3,000 unit(s) shipping from January 27, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | TWD7.60 | TWD190.00 |
| 50 - 75 | TWD7.50 | TWD187.50 |
| 100 - 225 | TWD7.40 | TWD185.00 |
| 250 - 975 | TWD7.20 | TWD180.00 |
| 1000 + | TWD7.10 | TWD177.50 |
*price indicative
- RS Stock No.:
- 240-1997
- Mfr. Part No.:
- PXN7R7-25QLJ
- Manufacturer:
- Nexperia
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 10.3A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Package Type | MLPAK33 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 13.6mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 12.5W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 10.3A | ||
Maximum Drain Source Voltage Vds 25V | ||
Package Type MLPAK33 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 13.6mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 12.5W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Nexperia N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Logic-level compatible
Trench MOSFET technology
Ultra low QG and QGD for high system efficiency, especially at higher switching frequencies
Superfast switching with soft-recovery
Low spiking and ringing for low EMI designs
MLPAK33 package (3.3 x 3.3 mm footprint)
Related links
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