Microchip TN5325 Type N-Channel MOSFET, 10.3 A, 650 V Enhancement, 3-Pin TO-92
- RS Stock No.:
- 239-5617
- Mfr. Part No.:
- TN5325K1-G
- Manufacturer:
- Microchip
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View bulk pricing optionsSubtotal (1 tray of 3000 units)*
TWD49,200.00
(exc. GST)
TWD51,660.00
(inc. GST)
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- Shipping from October 15, 2026
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Units | Per unit | Per Tray* |
|---|---|---|
| 3000 - 12000 | TWD16.40 | TWD49,200.00 |
| 15000 + | TWD16.10 | TWD48,300.00 |
*price indicative
- RS Stock No.:
- 239-5617
- Mfr. Part No.:
- TN5325K1-G
- Manufacturer:
- Microchip
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10.3A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | TN5325 | |
| Package Type | TO-92 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 140W | |
| Forward Voltage Vf | 1.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10.3A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series TN5325 | ||
Package Type TO-92 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 140W | ||
Forward Voltage Vf 1.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Microchip TN5325 series of low-threshold, enhancement-mode (normally-off) transistor utilize a vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.
Low threshold of maximum 2V
High input impedance and high gain
Rise Time of 15 ns
Turn-off Delay Time of 25 ns
Fall Time of 25 ns
Related links
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