ROHM Type N-Channel MOSFET, 500 mA, 600 V Enhancement, 8-Pin SOP R6000ENHTB1
- RS Stock No.:
- 235-2676
- Mfr. Part No.:
- R6000ENHTB1
- Manufacturer:
- ROHM
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 10 units)*
TWD202.00
(exc. GST)
TWD212.10
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 80 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | TWD20.20 | TWD202.00 |
| 50 - 90 | TWD19.70 | TWD197.00 |
| 100 - 240 | TWD19.20 | TWD192.00 |
| 250 - 990 | TWD18.70 | TWD187.00 |
| 1000 + | TWD18.20 | TWD182.00 |
*price indicative
- RS Stock No.:
- 235-2676
- Mfr. Part No.:
- R6000ENHTB1
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 500mA | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | SOP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8.8Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 4.3nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.75 mm | |
| Height | 6.3mm | |
| Length | 5.2mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 500mA | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type SOP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8.8Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 4.3nC | ||
Maximum Operating Temperature 150°C | ||
Width 1.75 mm | ||
Height 6.3mm | ||
Length 5.2mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ROHM R6xxxENx series are low-noise products, super Junction MOSFET, that place an emphasis on ease-of-use. This series products achieve superior performance for noise-sensitive applications to reduce noise, such as audio and lighting equipment.
Low on-resistance
Fast switching speed
Parallel use is easy
Pb-free plating
RoHS compliant
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