Infineon HEXFET Type P-Channel MOSFET, 31 A, 55 V, 3-Pin TO-252 AUIRFR5305TRL
- RS Stock No.:
- 223-8457
- Mfr. Part No.:
- AUIRFR5305TRL
- Manufacturer:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
TWD465.00
(exc. GST)
TWD488.25
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- 11,600 unit(s) shipping from October 26, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | TWD93.00 | TWD465.00 |
| 10 - 95 | TWD90.80 | TWD454.00 |
| 100 - 245 | TWD88.20 | TWD441.00 |
| 250 - 495 | TWD86.60 | TWD433.00 |
| 500 + | TWD80.00 | TWD400.00 |
*price indicative
- RS Stock No.:
- 223-8457
- Mfr. Part No.:
- AUIRFR5305TRL
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 31A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Forward Voltage Vf | -1.3V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Maximum Power Dissipation Pd | 110W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 31A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Forward Voltage Vf -1.3V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Maximum Power Dissipation Pd 110W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon automotive qualified single P-channel HEXFET power MOSFET in a D2-pak package. The cellular design of power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. It is used in automotive and wide variety of applications because of fast switching speed and ruggedized device.
Advanced planar technology
Dynamic dV/dT rating
175°C operating temperature
Fast switching
Lead free
RoHS compliant
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