Infineon HEXFET Type P-Channel MOSFET, 31 A, 55 V Enhancement, 3-Pin TO-252 IRFR5305TRPBF
- RS Stock No.:
- 827-4060
- Distrelec Article No.:
- 304-44-464
- Mfr. Part No.:
- IRFR5305TRPBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 20 units)*
TWD576.00
(exc. GST)
TWD604.80
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 120 unit(s) shipping from June 15, 2026
- Plus 2,760 unit(s) shipping from June 22, 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 480 | TWD28.80 | TWD576.00 |
| 500 - 980 | TWD28.10 | TWD562.00 |
| 1000 + | TWD26.30 | TWD526.00 |
*price indicative
- RS Stock No.:
- 827-4060
- Distrelec Article No.:
- 304-44-464
- Mfr. Part No.:
- IRFR5305TRPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 31A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 110W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Forward Voltage Vf | -1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 2.39mm | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 31A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 110W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Forward Voltage Vf -1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 2.39mm | ||
Length 6.73mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 31A Maximum Continuous Drain Current, 110W Maximum Power Dissipation - IRFR5305TRPBF
This MOSFET offers advanced performance for various electronic applications. Its low on-resistance and high current handling capabilities contribute to effective power management. With a robust design and reliable electrical characteristics, this component is suitable for various environments in automation and electronic systems.
Features & Benefits
• Achieves low on-resistance for enhanced efficiency
• Supports a maximum continuous drain current of 31A
• Designed for ease of use in surface mount applications
• Capable of operating within a temperature range of -55°C to +175°C
• Facilitates quick switching speeds for improved performance
• Allows a maximum power dissipation of 110W for diverse applications
Applications
• Utilised in power management systems
• Suitable for motor control
• Employed in switching power supplies for electronic devices
• Used in automotive circuits for improved efficiency
What are the recommended soldering techniques for installation?
Use vapour phase, infrared, or wave soldering techniques for optimal results, ensuring minimal thermal stress on the component.
Can it handle high temperature environments?
Yes, it operates effectively within a temperature range of -55°C to +175°C, making it appropriate for extreme conditions.
What is the significance of low RDS(on)?
Low RDS(on) reduces power losses, enhancing overall efficiency and decreasing heat generation during operation.
How do I ensure accurate switching behaviour?
Implement suitable gate drive circuits to achieve precise turn-on and turn-off characteristics, following the suggested trigger voltages.
Is this compatible with standard PCB layouts?
Yes, it is designed in DPAK packaging, enabling straightforward integration into typical PCB designs without the need for special modifications.
Related links
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
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