Infineon OptiMOS-TM5 N-Channel MOSFET, 60 A, 100 V Enhancement, 8-Pin TDSON BSC098N10NS5ATMA1

RS Stock No.:: 222-4622
Mfr. Part No.:: BSC098N10NS5ATMA1
Manufacturer:: Infineon

Infineon OptiMOS-TM5 N-Channel MOSFET, 60 A, 100 V Enhancement, 8-Pin TDSON BSC098N10NS5ATMA1

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Subtotal (1 pack of 10 units)*

TWD450.00

(exc. GST)

TWD472.50

(inc. GST)

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Units	Per unit	Per Pack*
10 - 10	TWD45.00	TWD450.00
20 - 90	TWD43.80	TWD438.00
100 - 240	TWD42.60	TWD426.00
250 - 490	TWD41.70	TWD417.00
500 +	TWD38.90	TWD389.00

*price indicative

RS Stock No.:: 222-4622
Mfr. Part No.:: BSC098N10NS5ATMA1
Manufacturer:: Infineon

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	60A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TDSON
	Series	OptiMOS-TM5
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	9.8mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	69W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	22nC
	Forward Voltage Vf	1.1V
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	150°C
	Height	1.2mm
	Length	5.35mm
	Width	6.1mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 60A
	Maximum Drain Source Voltage Vds 100V
	Package Type TDSON
	Series OptiMOS-TM5
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 9.8mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 69W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 22nC
	Forward Voltage Vf 1.1V
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature 150°C
	Height 1.2mm
	Length 5.35mm
	Width 6.1mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - BSC098N10NS5ATMA1

Infineon OptiMOS-TM5 Series MOSFET, 100V Maximum Drain Source Voltage, 60A Maximum Continuous Drain Current - BSC098N10NS5ATMA1

This MOSFET is a high-voltage N-channel enhancement device designed for surface-mounted power switching in demanding temperature ranges. It supports high continuous currents and is intended for applications requiring efficient conduction and fast switching within industrial temperature extremes.

Features and Benefits:

• 100 V rating provides high-voltage switching capability
• 60 A continuous drain current enables heavy-load handling
• 9.8 mΩ low RDS reduces conduction losses
• 69 W power dissipation supports significant thermal load
• 22 nC typical gate charge enables responsive switching
• 20 V gate tolerance allows robust gate-drive margins

Applications

• Suitable for high-voltage DC-DC converter stages
• Ideal for motor-drive current stages in power electronics
• Used with synchronous buck regulators for efficiency
• Can be used for high-current switching in server power rails
• Suitable for battery management and power distribution modules

What package is used and how does it affect board assembly?

It comes in an 8-pin TDSON surface-mount package which simplifies automated pick-and-place and soldering for Compact board layouts.

What thermal extremes can it operate within?

The device is specified to function from −55 °C up to 150 °C for ambient or junction operational scenarios.

How does the channel configuration influence control?

The N-type enhancement channel requires a positive gate-to-source voltage to conduct, allowing straightforward gate-drive design for switching applications.

What is the maximum gate voltage that should be applied?

The gate-to-source voltage must not exceed 20 V to avoid compromising the gate insulation and device integrity.

How does the package size support dense designs?

Its Compact footprint measuring 5.35 x 6.1 x 1.2 mm aids high-density layouts while maintaining power-handling capabilities.