Infineon OptiMOS-TM5 N-Channel MOSFET, 74 A, 80 V Enhancement, 8-Pin TDSON BSC072N08NS5ATMA1

RS Stock No.:: 222-4620
Mfr. Part No.:: BSC072N08NS5ATMA1
Manufacturer:: Infineon

Infineon OptiMOS-TM5 N-Channel MOSFET, 74 A, 80 V Enhancement, 8-Pin TDSON BSC072N08NS5ATMA1

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Subtotal (1 pack of 10 units)*

TWD552.00

(exc. GST)

TWD579.60

(inc. GST)

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Units	Per unit	Per Pack*
10 - 10	TWD55.20	TWD552.00
20 - 90	TWD53.80	TWD538.00
100 - 240	TWD52.40	TWD524.00
250 - 490	TWD51.40	TWD514.00
500 +	TWD47.50	TWD475.00

*price indicative

RS Stock No.:: 222-4620
Mfr. Part No.:: BSC072N08NS5ATMA1
Manufacturer:: Infineon

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	74A
	Maximum Drain Source Voltage Vds	80V
	Package Type	TDSON
	Series	OptiMOS-TM5
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	7.2mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1.1V
	Maximum Power Dissipation Pd	69W
	Typical Gate Charge Qg @ Vgs	24nC
	Maximum Operating Temperature	150°C
	Length	5.35mm
	Standards/Approvals	No
	Width	6.1mm
	Height	1.2mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 74A
	Maximum Drain Source Voltage Vds 80V
	Package Type TDSON
	Series OptiMOS-TM5
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 7.2mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1.1V
	Maximum Power Dissipation Pd 69W
	Typical Gate Charge Qg @ Vgs 24nC
	Maximum Operating Temperature 150°C
	Length 5.35mm
	Standards/Approvals No
	Width 6.1mm
	Height 1.2mm
	Automotive Standard No

Datasheet - BSC072N08NS5ATMA1

Infineon OptiMOS-TM5 Series MOSFET, 80V Maximum Drain Source Voltage, 74A Maximum Continuous Drain Current - BSC072N08NS5ATMA1

This MOSFET is a high-current N-channel semiconductor designed for switching and power conversion in demanding thermal environments. It operates across a wide temperature span and accepts gate voltages up to 20 V, making it suitable for applications requiring robust gate drive and substantial continuous drain current while mounted as a Compact surface device.

Features and Benefits:

• 80 V drain rating enables higher-voltage switching applications
• 74 A continuous current supports heavy-load power stages
• 7.2 mΩ Rds(on) reduces conduction losses during operation
• 69 W power dissipation allows sustained thermal loading
• 24 nC typical gate charge for predictable switching behaviour
• 8-pin TDSON surface package provides Compact PCB real-estate savings

Applications

• Suitable for high-current motor drive stages
• Ideal for DC-DC converter output stages
• Used with power distribution modules in server racks
• Can be used for battery management and charging systems
• Used for synchronous rectification in power supplies

What thermal extremes can it tolerate during operation?

It is rated to operate from −55 °C up to 150 °C.

What gate drive voltage range is permissible for switching control?

The gate may be driven up to 20 V to switch the device.

How does the package support automated assembly?

It is supplied in an 8-pin TDSON package intended for surface mounting.

What is the typical switching charge to consider in gate drivers?

Designers should account for a typical total gate charge of 24 nC when selecting a driver.