Infineon OptiMOS-TM5 Type N-Channel MOSFET, 131 A, 80 V Enhancement, 8-Pin TDSON BSC037N08NS5ATMA1
- RS Stock No.:
- 222-4618
- Mfr. Part No.:
- BSC037N08NS5ATMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 5 units)*
TWD375.00
(exc. GST)
TWD393.75
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 11,420 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | TWD75.00 | TWD375.00 |
| 10 - 95 | TWD73.00 | TWD365.00 |
| 100 - 245 | TWD71.20 | TWD356.00 |
| 250 - 495 | TWD69.60 | TWD348.00 |
| 500 + | TWD64.40 | TWD322.00 |
*price indicative
- RS Stock No.:
- 222-4618
- Mfr. Part No.:
- BSC037N08NS5ATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 131A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | TDSON | |
| Series | OptiMOS-TM5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 114W | |
| Typical Gate Charge Qg @ Vgs | 46nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.35mm | |
| Height | 1.2mm | |
| Standards/Approvals | No | |
| Width | 6.1 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 131A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type TDSON | ||
Series OptiMOS-TM5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 114W | ||
Typical Gate Charge Qg @ Vgs 46nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 5.35mm | ||
Height 1.2mm | ||
Standards/Approvals No | ||
Width 6.1 mm | ||
Automotive Standard No | ||
The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Pb-free lead plating; RoHS compliant
Superior thermal resistance 100% avalanche tested
Halogen-free according to IEC61249-2-23
Related links
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