onsemi NTBGS2D Type N-Channel MOSFET, 169 A, 60 V Enhancement, 7-Pin TO-263-7 NTBGS2D5N06C
- RS Stock No.:
- 221-6702
- Mfr. Part No.:
- NTBGS2D5N06C
- Manufacturer:
- onsemi
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Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 221-6702
- Mfr. Part No.:
- NTBGS2D5N06C
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 169A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | NTBGS2D | |
| Package Type | TO-263-7 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 2.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 136W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 45.4nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 15.7mm | |
| Length | 10.2mm | |
| Width | 4.7 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 169A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series NTBGS2D | ||
Package Type TO-263-7 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 2.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 136W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 45.4nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 15.7mm | ||
Length 10.2mm | ||
Width 4.7 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ON Semiconductor 60V of power MOSFET used 169 A of drain current with single N−channel. It has lower switching noise/EMI and minimize conduction losses.
Low RDS(on) to minimize conduction losses
Low capacitance to minimize driver losses
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