Infineon IPT N-Channel MOSFET, 169 A, 80 V Enhancement, 8-Pin PG-HSOF-8 IPT029N08N5ATMA1

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Subtotal (1 pack of 2 units)*

TWD379.00

(exc. GST)

TWD397.96

(inc. GST)

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Units
Per unit
Per Pack*
2 - 48TWD189.50TWD379.00
50 - 98TWD172.00TWD344.00
100 - 248TWD158.00TWD316.00
250 - 998TWD145.50TWD291.00
1000 +TWD135.50TWD271.00

*price indicative

RS Stock No.:
273-2794
Mfr. Part No.:
IPT029N08N5ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

169A

Maximum Drain Source Voltage Vds

80V

Series

IPT

Package Type

PG-HSOF-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

2.9mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

167W

Typical Gate Charge Qg @ Vgs

7nC

Maximum Gate Source Voltage Vgs

20V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS, JEDEC1, IEC61249-2-21

Automotive Standard

No

The Infineon MOSFET is a N channel 80 V MOSFET and ideal for high frequency switching and synchronized rectification. It is qualified according to JEDEC for target applications. This MOSFET is fully qualified according to JEDEC for industrial applications and halogen free according to IEC61249 2 21.

RoHS compliant

Pb free lead plating

Excellent gate charge

Very low on resistance

100 percent avalanche tested

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