Infineon HEXFET Type N-Channel MOSFET, 30 A, 200 V Enhancement, 3-Pin TO-247
- RS Stock No.:
- 919-4810
- Mfr. Part No.:
- IRFP250NPBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 25 units)*
TWD2,315.00
(exc. GST)
TWD2,430.75
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 150 unit(s) shipping from August 17, 2026
- Plus 4,175 unit(s) shipping from August 24, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 25 - 25 | TWD92.60 | TWD2,315.00 |
| 50 - 75 | TWD90.60 | TWD2,265.00 |
| 100 + | TWD84.10 | TWD2,102.50 |
*price indicative
- RS Stock No.:
- 919-4810
- Mfr. Part No.:
- IRFP250NPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-247 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 75mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 214W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 123nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 20.3mm | |
| Length | 15.9mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-247 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 75mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 214W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 123nC | ||
Maximum Operating Temperature 175°C | ||
Height 20.3mm | ||
Length 15.9mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MX
Infineon HEXFET Series MOSFET, 30A Maximum Continuous Drain Current, 214W Maximum Power Dissipation - IRFP250NPBF
This power MOSFET is engineered for high performance across various electronic applications. As an N-channel MOSFET, it efficiently enhances current flow when voltage is applied. It is notable for its capacity to manage high current levels while maintaining low on-resistance, which makes it suitable for power-intensive applications.
Features & Benefits
• Continuous drain current rating of 30A supports robust performance
• Power dissipation capacity of 214W accommodates heavy-duty applications
• Maximum drain-source voltage of 200V contributes to device reliability
• Low Rds(on) of 75 mΩ minimises energy loss during operation
• Enhancement mode improves control and efficiency in circuit applications
• Compatible with TO-247AC package for seamless integration into existing systems
Applications
• Power supplies for industrial automation
• Driving high-current loads in electronic circuits
• Converters and inverters in renewable energy systems
• Motor control requiring fast switching
How does this MOSFET handle high temperatures?
With a maximum operating temperature of +175°C, it functions effectively in high-thermal environments, ensuring consistent performance under stress.
What are the implications of the specified on-resistance?
A low Rds(on) of 75 mΩ results in reduced power losses, enhancing overall efficiency and decreasing heat generation during use.
Is this device suitable for pulsed applications?
Yes, it can handle pulsed drain currents up to 120A, making it appropriate for short-duration, high-current applications.
How does it manage gate voltage during operation?
The device accommodates a range of gate-to-source voltages from -20 V to +20 V, providing flexibility in various control circuits.
What is the significance of the avalanche ratings?
The single pulse avalanche energy rating of 315 mJ indicates its capability to endure brief energy surges, safeguarding it under fault conditions.
Related links
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-247 IRFP250NPBF
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-247 IRFP250MPBF
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-247