Infineon HEXFET Type P-Channel MOSFET, 13 A, 100 V Enhancement, 3-Pin TO-252 IRFR5410TRLPBF
- RS Stock No.:
- 215-2601
- Distrelec Article No.:
- 304-39-424
- Mfr. Part No.:
- IRFR5410TRLPBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 20 units)*
TWD1,022.00
(exc. GST)
TWD1,073.20
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 40 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 740 | TWD51.10 | TWD1,022.00 |
| 760 - 1480 | TWD49.90 | TWD998.00 |
| 1500 + | TWD46.70 | TWD934.00 |
*price indicative
- RS Stock No.:
- 215-2601
- Distrelec Article No.:
- 304-39-424
- Mfr. Part No.:
- IRFR5410TRLPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 205mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 66W | |
| Typical Gate Charge Qg @ Vgs | 58nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 205mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 66W | ||
Typical Gate Charge Qg @ Vgs 58nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon series fifth generation HEXFET from International rectifier utilize advanced processing techniques to achieve extremely low on resistance for Silicon area. This benefits, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET are well known for, providing sufficient level device for, provides designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-pack is designed for surface mounting using vapour phase, infrared or wave soldering technique.
Advanced Process Technology
Ultra Low On-Resistance
Lead-Free
Fully avalanche rated
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