Infineon HEXFET Type P-Channel MOSFET, -13 A, -150 V TO-252
- RS Stock No.:
- 258-3985
- Mfr. Part No.:
- IRFR6215TRLPBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 3000 units)*
TWD69,600.00
(exc. GST)
TWD73,080.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from December 08, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | TWD23.20 | TWD69,600.00 |
| 6000 + | TWD22.50 | TWD67,500.00 |
*price indicative
- RS Stock No.:
- 258-3985
- Mfr. Part No.:
- IRFR6215TRLPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -13A | |
| Maximum Drain Source Voltage Vds | -150V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 580mΩ | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.6V | |
| Typical Gate Charge Qg @ Vgs | 44nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 110W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -13A | ||
Maximum Drain Source Voltage Vds -150V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 580mΩ | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.6V | ||
Typical Gate Charge Qg @ Vgs 44nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 110W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon HEXFET power MOSFET is fifth generation HEXFETs from international rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapour phase, infrared, or wave soldering techniques. The straight lead version is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
increased ruggedness
Wide availability from distribution partners
Industry standard qualification level
Related links
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