Infineon HEXFET Type P-Channel MOSFET, 6.6 A, 100 V Enhancement, 3-Pin TO-252 IRFR9120NTRPBF
- RS Stock No.:
- 827-4082
- Distrelec Article No.:
- 304-44-467
- Mfr. Part No.:
- IRFR9120NTRPBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 20 units)*
TWD588.00
(exc. GST)
TWD617.40
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 100 unit(s) ready to ship from another location
- Plus 280 unit(s) shipping from October 27, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 480 | TWD29.40 | TWD588.00 |
| 500 - 980 | TWD28.60 | TWD572.00 |
| 1000 + | TWD26.80 | TWD536.00 |
*price indicative
- RS Stock No.:
- 827-4082
- Distrelec Article No.:
- 304-44-467
- Mfr. Part No.:
- IRFR9120NTRPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6.6A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 480mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Forward Voltage Vf | -1.6V | |
| Maximum Power Dissipation Pd | 40W | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.22mm | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Height | 2.39mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6.6A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 480mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Forward Voltage Vf -1.6V | ||
Maximum Power Dissipation Pd 40W | ||
Maximum Operating Temperature 150°C | ||
Width 6.22mm | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Height 2.39mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Infineon HEXFET Series MOSFET, 6.6A Maximum Continuous Drain Current, 40W Maximum Power Dissipation - IRFR9120NTRPBF
This MOSFET plays a vital role in contemporary electronic circuits, especially in applications that require efficient current management. It is characterised by its ability to deliver high performance and low on-resistance, making it suitable for a wide range of electrical and electronic systems. This device is tailored to meet the requirements of sectors such as automation, electrical engineering, and other areas dependent on power management solutions.
Features & Benefits
• High continuous drain current rating of 6.6A supports effective operation
• Capable of managing voltages up to 100V for demanding applications
• Designed in DPAK TO-252 package for precise surface mounting
• Low maximum drain-source resistance of 480mΩ improves power efficiency
• Provides a gate threshold voltage range of 2V to 4V for dependable control
• Supports enhancement mode operation to enhance switching performance
Applications
• Utilised for power management in automation systems
• Employed in DC-DC converter designs
• Suitable for high current switching in industrial equipment
• Integrated into power supply circuits for efficient performance
• Applicable in inverter circuits and motor control
What is the optimal operating temperature for this product?
The optimal operating temperature ranges from -55°C to +150°C, allowing efficient performance in various environments.
How can the gate threshold voltage influence performance?
The maximum gate threshold voltage impacts switching behaviour; the defined range of 2V to 4V ensures reliable on/off conditions.
Is there a specific method for mounting this device?
It is designed for surface mount applications, particularly within the DPAK TO-252 footprint, facilitating integration into PCB layouts.
What does the low RDS(on) mean for my circuit?
A low RDS(on) helps minimise power loss during operation, enhancing overall system efficiency and reducing heat generation.
Can this product handle reverse current?
Yes, it possesses characteristics suitable for effectively managing reverse currents, ensuring stability in various applications.
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