Infineon OptiMOS 5 Type N-Channel MOSFET, 87 A, 150 V N, 8-Pin SuperSO BSC093N15NS5ATMA1
- RS Stock No.:
- 214-4325
- Mfr. Part No.:
- BSC093N15NS5ATMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 5 units)*
TWD347.00
(exc. GST)
TWD364.35
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- 8,015 unit(s) shipping from March 10, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 1245 | TWD69.40 | TWD347.00 |
| 1250 - 2495 | TWD59.40 | TWD297.00 |
| 2500 + | TWD58.20 | TWD291.00 |
*price indicative
- RS Stock No.:
- 214-4325
- Mfr. Part No.:
- BSC093N15NS5ATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 87A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | OptiMOS 5 | |
| Package Type | SuperSO | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 9.3mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 139W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.2mm | |
| Width | 6.1 mm | |
| Standards/Approvals | No | |
| Length | 5.35mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 87A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series OptiMOS 5 | ||
Package Type SuperSO | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 9.3mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 139W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1.2mm | ||
Width 6.1 mm | ||
Standards/Approvals No | ||
Length 5.35mm | ||
Automotive Standard No | ||
This Infineon OptiMOS MOSFET offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.
It is ideal for hot-swap and e-fuse applications
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