Infineon OptiMOS 5 N-Channel MOSFET, 17 A, 30 V N, 8-Pin TSDSON
- RS Stock No.:
- 218-2983
- Mfr. Part No.:
- BSZ0589NSATMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 218-2983
- Mfr. Part No.:
- BSZ0589NSATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TSDSON | |
| Series | OptiMOS 5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.4mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 5.2nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 2.1W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 3.4mm | |
| Height | 1.1mm | |
| Length | 3.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TSDSON | ||
Series OptiMOS 5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.4mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 5.2nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 2.1W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 3.4mm | ||
Height 1.1mm | ||
Length 3.4mm | ||
Automotive Standard No | ||
The Infineon N-Channel Power MOSFET. This MOSFET is optimized for high performance Wireless charger.
Low FOMSW for high frequency SMPS
Very low on-resistance RDS(on) @ VGS=4.5 V
100% avalanche tested
Superior thermal resistance
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