Infineon OptiMOS 5 Type N-Channel MOSFET, 49 A, 80 V N, 8-Pin SuperSO BSC117N08NS5ATMA1
- RS Stock No.:
- 214-4328
- Mfr. Part No.:
- BSC117N08NS5ATMA1
- Manufacturer:
- Infineon
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TWD736.50
(exc. GST)
TWD773.40
(inc. GST)
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Units | Per unit | Per Pack* |
|---|---|---|
| 15 - 1245 | TWD49.10 | TWD736.50 |
| 1260 - 2490 | TWD47.80 | TWD717.00 |
| 2505 + | TWD44.80 | TWD672.00 |
*price indicative
- RS Stock No.:
- 214-4328
- Mfr. Part No.:
- BSC117N08NS5ATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 49A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | SuperSO | |
| Series | OptiMOS 5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 11.7mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 50W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.35mm | |
| Height | 1.2mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 49A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type SuperSO | ||
Series OptiMOS 5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 11.7mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 50W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Length 5.35mm | ||
Height 1.2mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon OptiMOS 5 Series MOSFET, 80V Drain Source Voltage, 49A Continuous Drain Current - BSC117N08NS5ATMA1
This MOSFET is a surface-mount N-channel power transistor designed for high-current switching in compact electronic assemblies. It operates across a wide ambient range and is suited to applications requiring efficient conduction and fast switching behaviour. The device is supplied in an eight-pin SuperSO package and is intended for use where low on-resistance and considerable drain current capability are required.
Features and Benefits:
• 11.7mΩ Rds(on) enabling reduced conduction losses
• 49A continuous drain current for heavy-load handling
• 80V drain-source rating for high-voltage switching
• 15nC gate charge for responsive switching control
• 50W maximum power dissipation for robust thermal performance
• 49A continuous drain current for heavy-load handling
• 80V drain-source rating for high-voltage switching
• 15nC gate charge for responsive switching control
• 50W maximum power dissipation for robust thermal performance
Applications
• Suitable for high-efficiency power supplies in electronics
• Ideal for DC-DC converters and synchronous rectification
• Used with motor controllers requiring elevated current capacity
• Can be used for telecoms and server power distribution
• Suitable for compact, high-density surface-mount assemblies
• Ideal for DC-DC converters and synchronous rectification
• Used with motor controllers requiring elevated current capacity
• Can be used for telecoms and server power distribution
• Suitable for compact, high-density surface-mount assemblies
What temperature extremes can it withstand during operation?
It is specified to operate from -55 °C up to 150 °C, accommodating harsh thermal conditions.
How does the package aid board-level design?
The SuperSO eight-pin layout and low-profile 1.2mm height permit dense component placement and low-inductance routing.
What is the typical forward voltage during conduction?
The device exhibits a forward voltage of 1.1V under specified conduction conditions, affecting conduction loss calculations.
What maximum gate stress should the design allow?
The gate should be driven within ±20V to avoid exceeding the maximum gate-source voltage rating.
Related links
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