Vishay Dual TrenchFET 2 N-Channel MOSFET, 30 A, 40 V Enhancement, 4-Pin SO-8 SQJ912DEP-T1_GE3

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Subtotal (1 reel of 3000 units)*

TWD60,900.00

(exc. GST)

TWD63,960.00

(inc. GST)

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Units
Per unit
Per Reel*
3000 - 3000TWD20.30TWD60,900.00
6000 +TWD19.70TWD59,100.00

*price indicative

RS Stock No.:
210-5048
Mfr. Part No.:
SQJ912DEP-T1_GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

40V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

5.9mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

24nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

27W

Forward Voltage Vf

790mV

Maximum Operating Temperature

175°C

Transistor Configuration

Dual

Width

4.37mm

Standards/Approvals

No

Length

4.9mm

Height

1.07mm

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

The Vishay Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFET has PowerPAK SO-8L package type.

TrenchFET® power MOSFET

AEC-Q101 qualified

100 % Rg and UIS tested

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