Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 7 A, 60 V Enhancement, 8-Pin SO-8
- RS Stock No.:
- 228-2944
- Mfr. Part No.:
- SQ4946CEY-T1_GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 reel of 2500 units)*
TWD31,750.00
(exc. GST)
TWD33,350.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from July 22, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 10000 | TWD12.70 | TWD31,750.00 |
| 12500 + | TWD12.30 | TWD30,750.00 |
*price indicative
- RS Stock No.:
- 228-2944
- Mfr. Part No.:
- SQ4946CEY-T1_GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | TrenchFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 11.7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 4W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.1V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101 | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series TrenchFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 11.7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 4W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.1V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101 | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Vishay TrenchFET automotive dual N-channel is power MOSFET.
100 % Rg and UIS tested
Related links
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 60 V Enhancement, 8-Pin SO-8 SQ4946CEY-T1_GE3
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 40 V Enhancement, 8-Pin SO-8
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 40 V Enhancement, 4-Pin SO-8
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 20 V Enhancement, 6-Pin SOT-363
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 40 V Enhancement, 8-Pin SO-8 SQJ208EP-T1_GE3
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 40 V Enhancement, 4-Pin SO-8 SQJ912DEP-T1_GE3
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 20 V Enhancement, 8-Pin SO-8
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 20 V Enhancement, 8-Pin SO-8 SI4204DY-T1-GE3