STMicroelectronics SCT10N120H N-Channel SiC Power Module, 12 A, 1.2 kV Enhancement, 3-Pin Hip-247 SCT10N120H

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Subtotal (1 reel of 1000 units)*

TWD348,100.00

(exc. GST)

TWD365,500.00

(inc. GST)

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Units
Per unit
Per Reel*
1000 - 4000TWD348.10TWD348,100.00
5000 +TWD313.20TWD313,200.00

*price indicative

RS Stock No.:
204-3949
Mfr. Part No.:
SCT10N120H
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

SiC Power Module

Channel Type

N

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

1.2kV

Package Type

Hip-247

Series

SCT10N120H

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.52Ω

Channel Mode

Enhancement

COO (Country of Origin):
CN
The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247 package, allows designers to use an industry standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.

Very tight variation of on-resistance vs. temperature

Very high operating junction temperature capability (TJ = 200°C)

Very fast and robust intrinsic body diode

Low capacitance

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