N-Channel MOSFET, 45 A, 1200 V, 3-Pin HiP247 STMicroelectronics SCT30N120

RS Stock No.:: 168-8966
Mfr. Part No.:: SCT30N120
Manufacturer:: STMicroelectronics

N-Channel MOSFET, 45 A, 1200 V, 3-Pin HiP247 STMicroelectronics SCT30N120

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Bulk discount available

Price Each (In a Tube of 30)**

TWD714.80

(exc. GST)

TWD750.54

(inc. GST)

496 In stock for delivery within 6 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over TWD2,857.00 (ex VAT)

Units	Per unit	Per Tube**
30 - 30	TWD714.80	TWD21,444.00
60 +	TWD699.20	TWD20,976.00

**price indicative

RS Stock No.:: 168-8966
Mfr. Part No.:: SCT30N120
Manufacturer:: STMicroelectronics

SCT30N120, Silicon Carbide Power MOSFET 45A, 1200V, 90mOhm N-Channel in HiP247
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	45 A
Maximum Drain Source Voltage	1200 V
Package Type	HiP247
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	100 mΩ
Channel Mode	Enhancement
Maximum Power Dissipation	270 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-10 V, +25 V
Typical Gate Charge @ Vgs	105 nC @ 20 V
Length	15.75mm
Transistor Material	Si
Maximum Operating Temperature	+200 °C
Width	5.15mm
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Height	20.15mm
Forward Diode Voltage	3.5V

N-Channel MOSFET, 45 A, 1200 V, 3-Pin HiP247 STMicroelectronics SCT30N120

FREE delivery for orders over TWD2,857.00 (ex VAT)

N-Channel Silicon Carbide (SiC) MOSFET, STMicroelectronics